Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 72
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calculations. . Note that there are some orientations with a net repulsion of the exciton
for e < 0 (i.e. the electron closer than the hole to the surface). However, in this case the
effect of the forces is significantly weaker than the attraction experienced for the
opposite orientation. This asymmetry arises from the differences in the effective mass of
the two carriers within the QW.
Let us assume, for a moment, that all excitons were oriented with e < 0. In this
case excitons would feel an attraction or repulsion based upon their distance from the
surface. For distances less than the critical distance D = 30 nm, the attraction ranges
from 1 to 3 orders-of-magnitude larger than the repulsive force felt at d > D. This huge
attraction near to the surface results in a significant gradient in the carrier concentration
as it depletes the carriers in the region around 25-30nm. This gradient, in turn, results in
an inward diffusion that would easily negate the weak repulsion experienced by the
excitons beyond the critical distance.
computing the net acceleration of the e-h pair. b, Net acceleration on an e-h pair
with orientation 0 and distance d from the surface of the nanoparticle. Red
represents a net acceleration towards the NP, and blue away from it. Each contour
represents and order of magnitude change in the respective direction.
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/82/: accessed November 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .