Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 67
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integrating the radiative recombination term over all space:
I(t) = Bp2(r,t) dr (5.4.5)
The enhancement in PL intensity is then defined as IAu(t)/IRef(t), the ratio of the
emission intensity in the Au system to that of the reference.
In order to investigate the time-dependent properties of the system, we
keep Eq. 5.4.4 as is, and take the generation term to be an instantaneous Gaussian
excitation pulse equal to Gp = 1 x1016 exp(-(r-ro)2/d) 6(t), where 6(t) is the Dirac Delta
function. Figure 5.4 shows the time evolution of the carrier concentration for both
systems. Figure 5.5 shows the PL Intensity as a function of time for both the reference
and Au NP systems. It is important to point out that our model has qualitatively similar
behavior to the time-resolved photoluminescence measurements presented in Figure
5.2. The origin of the slower decay in the Au NP sample becomes clear when the
curves are fitted using a three component exponential of the form:
I(t) = ANRe-t/NR + ARe-t/TR + AErre-t/TErr (5.4.6)
Here the first two exponentials represent the non-radiative and radiative decay
components respectively, and the third term represents error introduced due to the finite
size of the computational domain . Table 5.1 shows the results of this exponential fit.
Because of the finite size of the domain of calculation, carriers that diffuse out of the domain are
lost. This loss of carriers from the domain shows up as a third decay component in the intensity.
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/77/: accessed May 29, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .