Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 66
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op e Dp
at Dp V 2 +k (pEP) - Ap - Bp2 G, (5.4.4)
For the reference system, the electric field in the drift term is E=0, and it is E=-
e/4r2 for the NP system. In addition, I have used the following parameters for the
material-dependent parameters A, B  and Dp: A = 6x107 s-1, B = 1x1010 cm3 s-1
D = 12.5 cm2 s-1. In order to model a CW excitation, we take the generation term to be
Gp = 1x1016 cm-3 s-1 and set ap/at = 0 in Eq. 5.4.4. Figure 5.3 shows the carrier
concentration for the steady-state solution with the given parameters at a variety of
temperatures from 11K to 300K. It is clear from this plot that the carrier concentration
diverges as r approaches the surface of the nanoparticles. Furthermore, as the
temperature increases, the effective enhancement decreases by almost four orders-of-
magnitude, significantly decreasing the enhancement provided by each NP. The second
plot in Figure 5.3 shows the projected enhancement in the PL intensity as a function of
temperature. I have calculated the far-field PL intensity as a function of time by
104 b 103
S 102 10
10 - "- 1
0 20 40 60 80 100 0 50 100 150 200 250 300
r (nm) Temperature (K)
Figure 5.3 a, The carrier concentration as a function of distance from the Au NP in
the steady-state model at temperatures from 11K to 300K. The solid red line
represents the edge of the NP, and the dashed red line represents the nearest the
carriers can approach the NP in the InGaN QW. b, PL Enhancement as a function
of temperature in the steady-state model. Enhancement is calculated as the ratio
of the Au NP Intensity to the reference intensity.
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/76/: accessed July 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .