Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 61
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accounted for by plasmonic interaction due to the plasmon energy of the Au NPs being
lower than the energy of the QW (2.3 eV vs 3 eV ).
Further evidence that plasmonics do not play a role in the measured PL
enhancement is provided by time-resolved PL measurements of the samples. The
results of these measurements, taken at 11K with an excitation power of 10 mW, can be
found in Figure 5.2. In InGaN, it has been observed that plasmonic enhancement is
accompanied by a decrease in the radiative recombination lifetime of up to two orders of
magnitude . This decrease is the result of rapid recycling of carriers due to resonant
SP-carrier coupling. This reduction is a signature of plasmonic interaction and is the
cause of the strong enhancement observed in the PL. Contrary to the case of
plasmonics, the radiative recombination lifetime of the system appears to increase in
the presence of both the Au and Ag NPs.
0 2 4 6 8
Figure 5.2 Time-resolved PL measurement showing
the decay lifetime of the reference (black), Au NP
(red) and Ag NP (blue) samples.
5.3 The Image Charge Effect
It is clear from the
anomalous PL enhancement
and the increase in the radiative
decay lifetime of the system that
SPs cannot be interaction
mechanism present in the Au
NP sample. There must instead
be a mechanism of interaction
between carriers and a metal
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/71/: accessed July 25, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .