Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 60
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should be possible to grow a p-type layer of the appropriate thickness without
increasing the distance between the carriers and the NPs.
5.2 Anomalous Photoluminescence Results
When attempting to demonstrate plasmonic interaction in a metal/semiconductor
structure, it is common to first search for enhancement in the CW photoluminescence
(PL). I have investigated the CW PL emission in these nanoparticle samples using a
reference (NP-less) sample as well as samples with Au and Ag nanoparticles. The
results of these PL measurements are presented in Figure 5.la. By way of comparison,
I provide the results of a CW PL measurement of a similar InGaN/GaN multi-QW
system with a metal thin-film (Au and Ag) along with a reference in Figure 5.1b. It is
immediately obvious that while the intensity of the thin-film samples behaves as would
be expected for plasmonic interaction, the NP samples exhibit anomalous behavior.
Specifically, enhancement is produced in the presence of Au NPs, which cannot be
._ . . 1 .o -
0.5- . w 0.5-
0.0 2.9 3.0 3.1 2.35 2.45 2.55 2.65
Energy (eV) Energy (eV)
Figure 5.1 a, CW PL measurement of InGaN/GaN multi-QW system with embedded
Au NPs (Red), Ag NPs (blue) and without NPs (black) at 77K (solid) and 300K
(dashed). Note the anomalous increase in emission intensity due to the Au NPs. b,
CW PL measurement for a similar structure with metal thin-films. Line colors are the
same as those in a.
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/70/: accessed January 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .