Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 56
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Figure 4.7 a, Near-field topology of the sample showing the 'wing' and
'seed' regions. Dashed lines have been placed to highlight the region
boundaries. b, Near-field integrated photoluminescence intensity. Note
that in this sample the emission intensity is highest in the seed regions. c,
The empirically derived Huang-Rhys parameter. d, The strain as derived
using the inverse of the function S(Exx) presented in Fig. 4.5. Brighter
regions represent areas with lower strain values.
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/66/: accessed November 25, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .