Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 55
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while one would expect a strain of around -2% in the studied system. This discrepancy
arises primarily from our neglect of the other optical phonon modes which contribute to
the electron-phonon coupling in the InGaN/GaN system. Specifically, the modes I have
considered, the quasi-confined LO phonon modes, are only one of 5 different mode-
types expected in the system. Additionally, uncertainty in the PDPs is likely to further
contribute to the observed discrepancy.
The solution to these discrepancies is to first expand the calculations to include
all the relevant modes. Secondly it would be ideal to use a secondary technique to
measure the strain in the system, allowing us to compare and correct the model as
necessary. A technique such as near-field raman spectroscopy would complement this
strain-mapping technique well, as it can produce a direct measurement of the strain
more directly by measuring the phonon frequencies, but is incapable of separating out
the strain within the active layer from the strain of the cap and buffer layers. By using
both techniques within the same region it would be possible to compare the strain of the
active layer directly to the strain of the surrounding buffer materials, allowing for the
discovery of defects within the active layer which do not extend into the surrounding
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/65/: accessed October 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .