Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 53
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an approximation of the function by computing S for varying values of the biaxial strain
Exx, and then interpolating the missing values using a cubic spline. For simplicity I have
assumed that the wavefunction is a weak function of the strain and hence neglected the
change in W as a function of Exx. Figure 4.5 shows the results of these calculations,
which can now be used to convert experimentally measured values of S into the biaxial
4.5 Application: Near-field Strain Mapping
To test the efficacy of this technique, we used an InGaN/GaN multi-quantum well
(MQW) structure grown via epitaxial layer overgrowth (ELOG). The ELOG technique
uses apertures in an SiO2 mask to restrict the growth of GaN to "seed" regions .
Growth is continued through these openings and once above the mask growth
continues normal to the substrate in the seed regions and parallel to it in the masked
Figure 4.6 Top-down images of the ELOG sample showing the 'wing' and
'seed' regions of the sample. Imaging was done with an optical microscope
using a 100x objective, and via AFM for the inset.
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/63/: accessed February 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .