Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 52
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It is important to point out that the strain also affects S through the wavefunction
calculations as well. Specifically, the piezoelectric constant Fpz =- InGaN Exx is a function
of the strain in the system. Increasing or decreasing the strain will serve to increase the
separation of the electron and hole portions of the exciton wavefunction within the QW.
Table 4.3 The PDPs and other parameters necessary to derive the strain-dependent
phonon dispersion relations. Asterisks represent those parameters instead derived
using Ref. .
GaN InN InxGalxN
ao (A) 3.189  3.548 
aA1[LO], bA1[LO] (cm1) -847, -903  -944, -750 
aE1[Lo], bE1[L] (cm-1) -775, -703  *
aA1 [TO], bA1[TO] (cm1) -664, -1182  *
aE1[To], bE1[TO] (cm1) -820, -680  -735, -644 
aE, bEH (cm-1) - 998, -635 
C13 / 033 0.229  0.470  0.229 (1 - x) +
Since it is impossible to derive an analytical function for S(Exx), I have produced
-3 -2 -1 0 1 2
Percent Strain (xx)
Figure 4.5 The Huang-Rhys parameter S as a
function of the biaxial strain Exx in the system.
. . . . . . . . . . .
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/62/: accessed November 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .