Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 50
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3(qL, Z) --, _,Oeq(Zo-z)
+ I [ J l (_ , e q z,ed -, - 2 B3 (+ , e - q z,, d , 4 (1 ( . 3 .1 7
(q)eq i]eq (zl--z)Jr- + C N+1 [+,N+le zN+1(zN-z) (cont'd)
+ -,N+ (eq(zN-Z) -- eqz,N+1(ZN-Z))]
where is defined to be:
qz,j Xz,j(w) (4.3.18)
Eqs. 4.3.16-18 along with the dispersion relation then allow us to compute the
value of F for our heterostructure. Figure 4.4 shows the upper and lower branches of F
m=8 - m=1.
-5 0 5 15 25 35 45 -5 0 5 15 25 35 45
z (nm) z (nm)
Figure 4.4 a, Lower branches of Fm(q,ze,h) with the symmetric solutions in black and
anti-symmetric in red with the associated mode number. b, Upper branches of the
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/60/: accessed December 16, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .