Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 48
The following text was automatically extracted from the image on this page using optical character recognition software:
Aj - BA Do
B -B B0 (4.3.16)
This allows us to solve for the primed constants using Eq. 4.3.14. Bo in turn, is given by
A - Qo,+() + QN+,+(O)
qz, o qz,N+1
+ --(4~Bcq,j djQ ,- _(w)
j = z,j
- [ij2(1 - e2qz,) - B2(1 - e2qzJdJ)] ,+()} (4.3.17)
2,(O)_ (xj(O-) ~ 2
2 0)xT jI ( E X j, ( d ) - 1 ) [ E x l - , j
where E(X) and X( ) are the optical and static dielectric constant in layer j in the direction
of X respectively.
4.3.4 F - The Electron-Phonon Coupling Strength
The final thing that needs to be computed in order to obtain a value for S is the
electron-phonon coupling function F. For this calculation we have used the equation for
F for the I-LO modes presented in Ref. . In this case Fm(q-L,Ze,h) is given as:
Here’s what’s next.
This dissertation can be searched. Note: Results may vary based on the legibility of text within the document.
Tools / Downloads
Get a copy of this page or view the extracted text.
Citing and Sharing
Basic information for referencing this web page. We also provide extended guidance on usage rights, references, copying or embedding.
Reference the current page of this Dissertation.
Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/58/: accessed February 19, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .