Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 48
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Aj - BA Do
B -B B0 (4.3.16)
This allows us to solve for the primed constants using Eq. 4.3.14. Bo in turn, is given by
A - Qo,+() + QN+,+(O)
qz, o qz,N+1
+ --(4~Bcq,j djQ ,- _(w)
j = z,j
- [ij2(1 - e2qz,) - B2(1 - e2qzJdJ)] ,+()} (4.3.17)
2,(O)_ (xj(O-) ~ 2
2 0)xT jI ( E X j, ( d ) - 1 ) [ E x l - , j
where E(X) and X( ) are the optical and static dielectric constant in layer j in the direction
of X respectively.
4.3.4 F - The Electron-Phonon Coupling Strength
The final thing that needs to be computed in order to obtain a value for S is the
electron-phonon coupling function F. For this calculation we have used the equation for
F for the I-LO modes presented in Ref. . In this case Fm(q-L,Ze,h) is given as:
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/58/: accessed June 28, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .