Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 46
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j = 0..9
(1 -a+ fj+ -z,j+1dj+1
( j+1) j j+1 j
(1 - j,j+) flj,j+ (1 + j,j
(1 + +j,j+l)fj,j+lezj+ldj+1 )
qz, jEz, j (W) X L, j+1( )
j,j+l = +l+l(j+ =
The dispersion relation can then be found by relating the j=O coefficients to the j=10O
coefficients. Doing so yields:
0 5 10 15
Figure 4.3 Plots of the dispersion relations for the upper and lower branches of
the I-LO phonon modes for the heterostructure pictured in Fig 4.2. The 10
modes arise from zone-folding of the phonons at the super-lattice interfaces.
Black (red) lines represent the (anti-)symmetric phonon modes.
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/56/: accessed August 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .