Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 41
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Table 4.1 Material parameters used for calculating the excitonic wavefunction.
GaN InN InxGa_xN
Eg (eV) 3.493 - (3.493 - 2.843 x -2.500 x (1 - x))
, (MV cm-1) 98 221 (,GaN (1 - X) +,lnN X)
Fpz (MV cm-1) - - - InGaN Exx(X)
Here the Indium-fraction-dependent strain Exx(x) is defined as (aGaN-alnGaN)/aIlnGaN,
where aGaN and alnGaN are the unstrained lattice constants along the a-axis. This
equation assumes that the InGaN has been grown pseudomorphic to the GaN, i.e. the
thickness of the QW is small enough that the InGaN lattice has been uniformly
compressed to match that of the GaN.
Solving Eq. 4.3.4 using the parameters in Table 4.1 and the boundary conditions
- - 0.6-
_ -_ _ --- - 0.2.
5.0 2.5 0.0 -2.5 -5.0 -7.5 2.5 0.0 -2.5 -5.0 -7.5
z (nm) z (nm)
Figure 4.1 a, Band-structure diagram of a single 2.5 nm In0.20Ga0.80N/GaN QW.
The black (red) dashed lines represent the InGaN bandgap before (after) the
piezoelectric shift in energy Fpzdqw. The dotted black lines represent the energy
levels of the electron and hole, with the distance between them being the
reduced bandgap due to the quantum-confined Stark effect. b, Wavefunctions of
the electron (black) and hole (red) for the QW shown in in a. The dashed lines
represent the solution for the same system with Fpz = 0.
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/51/: accessed April 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .