Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 40
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2m(F4zz + FpzE)
4:1(z) = CAi 2mF +DBi
The solutions in the other two regions, as would be expected, take the form of
exponential functions, such that the full wavefunction has the form
z 2m(AEc,,v-E) z 2m(AEc,v-E)
Ae h +Be h
2m(Fpzz + FzE) 2m(Fpz + E)
= C Ai 2 + D Bi 2
(- hpz)2/3 (- hpz)2/3
z 2m(AEc,v-E-Fpzdqw) z 2m(AEc,v-E-Fpzdqw)
e h +Te
with the boundary conditions:
4I,(-oo) = 0; 4I,, (oo) = 0
I (-dqw) = 4,II(-dqw); 4:: (0) = N11(0)
B.C.s= z-7 iJ(-dqw) =- z $zi(-dqw)
-z (0) = ()
z < -dqw
-dz <z 0
Fig. 4.1a depicts the band-structure of the QW we wish to find the solution of
Schrodinger's equation for, while Table 4.1 presents the parameters used for calculating
the band-structure and solving Eq. 4.3.4.
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/50/: accessed January 20, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .