Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 37
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strength of electron-phonon interactions within the structure by the equation S = (n+1)
In+1/In . This parameter S, known as the Huang-Rhys parameter, is a measure of the
energy of interaction between electrons and LO phonons  within the system and is
dependent on the phonon frequencies of the materials used in the heterostructure .
Since it is well known that phonon-frequencies in materials experience strain related
shifts [41-43], measured values of S contain information about the strain. To-date, both
the empirical measurement of the Huang-Rhys parameter via photoluminescence
measurements [44,45] and theoretical calculation [46-51] have been well established.
4.3 Calculating S
Before attempting to calculate the strain-dependent Huang-Rhys parameter
S(Exx), I will first demonstrate the calculation of S for our InGaN/GaN ELOG MQW
structure. I have simplified the calculations by limiting the calculations to only include
the interface LO (I-LO) phonon modes. This is possible in InGaN systems as it is known
that the I-LO phonon modes account as much as 46% of the total electron-optical
phonon interactions .
For the case of the I-LO phonon modes, S can be defined as 
S = (heO3o)-> 1 Dm(q1)12 (4.3.1)
in which wLO is the LO phonon frequency, Dm (q-) represents the difference between the
strength of coupling of electrons and holes to the phonons and is given by :
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/47/: accessed May 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .