Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 35
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SPECTRAL STRAIN MAPPING
In semiconductor nanostructures, defects can strongly affect the structure's
efficiency. Defects result in local changes to the lattice, thereby affecting the local strain.
Local strain measurements, therefore, provide a means of assessing the quality of
semiconductor nanostructures. Advancements in high-resolution X-ray diffraction 
and tip-enhanced Raman spectroscopy  show promise for measuring the strain in
nanoscale regions. When the nanostructures being studied are embedded in a bulk,
however, these techniques can have trouble separating the active region's signal from
the bulk. I present here a new general spectroscopic technique for investigating strain
and apply it to near-field imaging of nano-scale regions. This strain-mapping method
compares theoretical modeling of electron-phonon interactions with phonon-replica
intensities extracted from spectra to determine the strain. Our proposed technique is
capable of measuring the strain of an active layer regardless of the material it is
Elimination of growth defects in nanostructures requires techniques capable of
effectively resolving strain variations and defects. Advances in techniques such as high-
resolution X-ray diffraction (HR-XRD) and near-field Raman spectroscopy provide
important tools for assessing the strain in a nanostructure. In light-emitting
semiconductor quantum heterostructures it is common for doped binary semiconductors
to provide the potential barrier for quantum confinement. In many cases the doping
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/45/: accessed August 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .