Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 34
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Carriers generally only obey this rate equation when there is a minority carrier
within the QW. In this case the minority carrier concentration determines the
recombination rate and we can treat recombination as proportional to the minority
concentration. In cases where there is no minority carrier, we must treat recombination
as being proportional to n*p, the concentration of electrons times the concentration of
holes. If the system is homogeneously excited, then we can assume that n=p and that
recombination proceeds as:
= B n2 (3.8.2)
Where B is proportional to the probability of recombination, and the recombination
lifetime is defined to be the concentration dependent value Bn. It is still the case,
however that the decay constant is proportional to the recombination lifetime.
In cases where the two are not proportional, as in our system in Chapter 5, the
decay constant still provides information about the time-dependent behavior of the
system, and can be quite useful. Great care, however, must be taken to avoid using the
decay constant in this case to draw direct conclusions about the recombination rate.
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/44/: accessed May 27, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .