Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 32
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E1 = E2 + SEIHP
For our system I have found 6EIHP 130 meV makes for a good starting guess, and
allow the energy to vary +/- half that value. Figure 3.7 depicts a fit using this model of a
typical spectrum from our system.
3.8 Fitting TRPL Decay Measurements
Another important use of fitting is in determination of the radiative and non-
radiative recombination lifetimes from the decay of the measured intensity with time in
TRPL experiments. The most general and most commonly used model for fitting is that
of an exponential decay. That is to say that the intensity can be modeled as following
the following equation:
I(t) = A e-t/T (3.8.1)
where A is some amplitude, t is the time, and T is the decay constant, i.e. the time over
which 1/e=36% of the original intensity of the signal remains. This definition of the decay
constant is analogous to the lifetime of carriers undergoing recombination obeying the
= T-1 n (3.8.2)
Here n is the carrier concentration, and: is known as the radiative recombination
lifetime, or just recombination lifetime in the absence of other forms of recombination.
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/42/: accessed March 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .