Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 30
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In this work I have developed model for fitting the emission from the InGaN/GaN
QWs mentioned in the previous chapter based on previous works which used fitting in a
similar system . The model uses a main peak with two phonon replicas to represent
the emission of the main QW, and an independent high-energy peak to represent the
emission of the IHP QWs. Each peak is represented by a single Gaussian:
Here Aj is the amplitude, Ej the center in energy, and S6 the FWHM of the Gaussian. The
full equation would then be
I(E)= I(E) (3.7.2)
where we take j=1 to represent the IHP peak, j=2 the main QW peak and j=3,4 to be the
first and second phonon replicas respectively. Next we note that for a system with
phonon replicas we can assume that the FWHM of the peaks should be equal , so
we can set 62 = 63 = 64. The FWHM of the IHP QW peak must remain independent due
to the difference in the QW thickness and the presence of a threading dislocation, which
acts as a non-radiative recombination center, at the center of the IHP [32, 33].
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/40/: accessed May 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .