Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 26
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the duration of the initial pulse should be significantly shorter than the timescales of the
interactions being observed. For a typical semiconductor, the majority of carrier
dynamics fall within a timescale between 1 ps (e-e/e-h/e-ph scattering) and 10 ns (e-h
recombination) . To study these interactions I used a Mai-Tai Ti:Sapphire
Femtosecond laser with a repetition frequency of 80 MHz, which equates to 12.5 ns
between pulses. The laser's fundamental was set to 750 nm and passed through a
doubler to give an excitation wavelength of 325 nm. Power was kept at 10 mW for the
temperature dependent TRPL measurements. The experimental setup for TRPL is
depicted in Figure 3.5.
3.5.1 Power-Dependent TRPL
Ti:Sapph Doubler X.
X Beam Stop
a Collimating Cryostat
S a m p le..............................
Figure 3.5 Schematic diagram of the TRPL experiment. Excitation via a
Ti:Sapphire pulsed laser run through a doubler to produce a 375 nm
excitation wavelength. Emission from the sample is collected and
collimated using a pair of collimating lenses and then fed into the entry slit
of a STREAK camera to measure the time-dependence of the emission.
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/36/: accessed July 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .