Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 20
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3.3 Far-field vs. Near-field
It is possible to divide PL measurements into two regimes, measurements in the
far-field, and measurements in the near-field. Far-field measurements are the most
common form of PL, and result from the measurement of the optical far-field, i.e. the
photon that is produced upon carrier recombination. Because of this, far-field
measurements are subject to the diffraction limit for the maximum resolution achievable.
The majority of experimental methods used in this work are far-field measurements.
Near-field measurements, on the other hand, involve interaction with the
evanescent fields near the emitter. This evanescent field decays exponentially with
distance from the emitter, and is not subject to the diffraction limit. Later in this chapter I
X Beam Stop
Collimating " -
Figure 3.2 Schematic diagram depicting the experimental setup used for
PL. Excitation from the HeCd CW laser proceeds through a prism to split
out the 442 nm beam line, then the remaining 325 nm line is directed to
the sample. Photoemission from the sample is collected and focused on
the entry slit of a Triax 550 spectrometer using a pair of collimating
lenses. The CCD output is then sent to the computer and transformed into
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/30/: accessed November 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .