Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 16
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2.5 Electron-Phonon Interactions and Phonon Replicas
The second interesting feature of InGaN/GaN QWs is strong electron-phonon
coupling. This coupling arises due to the carrier separation caused by the built-in
electric field, which induces to a polarization of the lattice around the carriers. This
polarization allows the lattice to interact with the carriers directly, resulting in enhanced
There are three primary modes of electron-phonon interaction in InGaN:
Piezoelectric interaction by carriers with acoustic phonons, deformation potential
interaction with acoustic and optical phonons, and Frohlich interaction with longitudinal
optical (LO) phonons. Of these three we are primarily interested in the Frohlich
interaction. The interaction between an electron-hole pair and an LO phonon is
described by the Hamiltonian :
Hex-pht Vnn (q)Bnk+qBn,k (aq + a) (2.5.1)
Here B and a are the exciton and phonon construction and destruction operators
respectively, Vnn'(q) is the exciton-phonon interaction matrix element, q the phonon
wavevector, n the initial electronic state, and n' the final electronic state. vnn'(q) takes
the form :
Vnn' (q) = d3r n(r)ni (r) [F fe--r _ Fei (2.5.2)
where F is the electron-LO or hole-LO coupling constant for Fr6hlich interaction.
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/26/: accessed October 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .