Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 14
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2.4 Piezoelectricity and the Quantum-Confined Stark Effect
In addition to the aforementioned IHPs which arise in InGaN/GaN
heterostructures, there are a couple of interesting features which are observed in these
systems. The first feature I will discuss is the built-in electric field which arises in
InGaN/GaN heterostructures due to spontaneous polarization at the GaN/InGaN
interfaces  and the piezoelectric nature of InGaN . The electric field that is
produced is a function of the strain in the system, quantum well width and the indium
fraction used, and runs parallel to the c-axis of the heterostructure .
The piezoelectric polarization is given by the equation:
Pz = e31Exx + e31Eyy + e33Ez (2.4.1)
where e31 and e33 are components of the piezoelectric tensor for InGaN, and E,,,,,, zare
3., -i i
2 r CO esut i pran F
InGaN/GaN QW. The band bending due to the
electron and hole and a reduction in the bandgap
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/24/: accessed November 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .