Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 12
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within the IHP is offset slightly, leading to regions with differing numbers of coupled
QWs. It is well known that the splitting resulting from coupled QWs results in a decrease
in the energy of the lowest energy state within the QW as the number of coupled QWs
increases. This gives rise to the stepped energy structure depicted in the schematic.
One consequence of this structure is a sharp red-shift in the energy of IHP QW
emission at low temperature when the degeneracy of the step states is lifted. That is,
above a certain temperature the thermal energy is larger than the difference between
the adjacent energy levels, thus rendering the states degenerate. When the
temperature drops below this level, new states become available, and the carriers are
able to relax into lower energy states, resulting in a red-shift emission energy with
temperature instead of the expected blue-shift. Figure 2.5a shows the energy of
emission of the IHP QWs as compared to the c-plane QWs. Note that the energy of
emission of the c-plane QWs continues to increase as temperature decreases. The IHP
IHP MQW T IHP MQW
3 20 * c-plane MQW 6 * c-plane MQW
" 3.14 4
3.10 -,, 3
50 100 150 200 250 300 50 100 150 200 250 300
mclprctrL (K) Temperature (K)
Figure 2.5 a, Emission energy of the IHP and c-plane QWs as a function of temperature
from 300 K down to 11 K. b, Decay lifetime of the IHP QWs and the c-plane QWs as a
function of temperature.
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/22/: accessed July 25, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .