Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 10
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for continued growth of the GaN. The regions of exposed GaN are known as the "seed"
regions, while those covered with SiO2 are referred to as the "wing" regions. When GaN
growth is resumed, it begins normal to the surface in the seed regions. Once the GaN
layer thickness is larger than that of the mask layer, the growth continues in two
directions: Normal to the surface in the seed region, and parallel to the surface in the
wing region. Figure 2.2 contains a schematic diagram of the growth of a GaN buffer
using ELOG. The end result of this growth is a wing region almost entirely devoid of
2.3.2 Inverted Hexagonal Pits and TDs
While AIGaN and GaN heterostructures are sensitive to TDs, it turns out that
InGaN heterostructures seem to be insensitive to their presence . This is due to the
(a) TD (d)
r ( I I I MQW
(b) Position c-Plane MQW
Figure 2.3 a, Schematic of the IHP QWs showing the variation in number of coupled
QWs as a function of distance from the TD. b, Energy diagram showing the energy of
the lowest level for the coupled QWs as a function of distance from the TD. c, The
energy of the QW taking into account the built-in electric field which will be discussed
in 2.4.1. d, Schematic of c-plane QWs falling into the IHP. Area between the red lines
corresponds to a.
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/20/: accessed October 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .