Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 9
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extremely sensitive to the threading dislocation density . Therefore much effort has
been made towards controlling the dislocation density in the GaN buffer sample. A
number of techniques have been developed towards this end, many of which make use
lateral growth to bend the threading dislocations, preventing them from reaching the
surface of the buffer layer.
2.3.1 Epitaxial Layer Over-Growth
One such method is epitaxial layer over-growth (ELOG) . In ELOG, a mask
layer of SiO2 is grown atop a GaN seed layer and partly removed to provide apertures
Figure 2.2 Schematic diagram of ELOG-grown GaN a, A GaN buffer is
grown on sapphire substrate. b, SiO2 is grown on the GaN and partly
removed to create a mask to constrain growth. c, Growth is resumed, and
proceeds only through the apertures in the mask, the blue arrows signal the
direction of growth. d, After the mask growth proceeds normal to the
surface in the seed regions and parallel to the surface in the wing regions.
TDs only remain in the seed region.
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/19/: accessed October 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .