Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 6
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derived from GaN heterostructures can be found in the nearly ubiquitous BluRayTM and
DVD drives, as well as solid-state lightning and other uses such as laser pointers.
The primary nitride used is the aforementioned GaN. Generally GaN is used to
as a substrate for other Ill-V nitride structures, as it is the easiest to grow directly on a
substrate. The other binary nitride semiconductors that see use are aluminum nitride
(AIN) and indium nitride (InN). Figure 2.1 shows the band-gap energy and lattice
constants of the three binary Ill-V nitrides, along with the lattice constants and bandgap
energies of their tertiary compounds.
Recent advancements in growing high quality InN films have allowed for more
accurate measurements of the InN bandgap, which has led to the revision of the
bandgap from 1.97 eV to 0.77 eV . This change extends the range of possible
energies achievable with the Ill-V nitrides all the way into the near infrared, including the
optical fiber communication wavelengths 1330 nm and 1550 nm.
Table 2.1 List of binary Ill-V nitrides, their bandgaps and their lattice constants. All
parameters from Reference  unless otherwise noted.
Egap (eV) a (A) c (A)
GaN 3.47 3.187 5.186
AIN 6.2 3.112 4.982
InN 3.533 5.693
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/16/: accessed February 23, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .