Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 5
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2.1 Introduction to Nitrides
As far as semiconductor material systems go, the Ill-V nitrides are a fairly recent
development. Major progress in the Ill-V nitrides was made in the '90s when gallium
nitride (GaN) was successfully used to make blue LEDs and laser diodes (LDs). Despite
the poor quality of the initial heterostructures, the strong demand for solid-state blue
lasers and LEDs drove the development of GaN and InGaN/GaN heterostructures .
The development of solid-state white lightning using UV/Blue LEDs and a
phosphorescent coating provided even more incentive to develop the nitrides.
Today the market for the nitrides has continues to expand. The blue lasers
a I I
6 AIN -200
22 ' InN5(Old) M
3.00 3.25 3.50 3.75
Lattice Constant (A)
Figure 2.1 Bandgap Energies of the three main binary III-
V nitrides and associated trinary compounds. The solid
lines represent the bandgaps of the trinary compounds.
The dashed red lines represent the estimated bandgaps
based on the original estimate of InN's bandgap
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/15/: accessed September 25, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .