Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 4
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enhancement over the entire spectrum without the need for tuning plasmon frequencies
via alloying or limiting the emission frequencies to those which overlap with plasmon
In this work I provide a model for non-resonant light emission enhancement
based on electrostatic interaction, as well as experimental evidence of the enhancement
in an InGaN/GaN multiple quantum well (QW) system. The results of this research are
presented in Chapter 5 of this work.
In the course of my investigation of this effect, I have also devised a means of
extracting strain information from spectral data. This technique makes use of the
phonon replicas which arise due to interaction of longitudinal optical (LO) phonons with
carriers during recombination. I present here preliminary results of this technique used
for strain mapping using a near-field scanning optical micro-spectrometer (NSOM) in
Chapter 4 of this work.
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/14/: accessed July 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .