Electrostatic Effects in III-V Semiconductor Based Metal-optical Nanostructures

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The modification of the band edge or emission energy of semiconductor quantum well light emitters due to image charge induced phenomenon is an emerging field of study. This effect observed in quantum well light emitters is critical for all metal-optics based light emitters including plasmonics, or nanometallic electrode based light emitters. This dissertation presents, for the first time, a systematic study of the image charge effect on semiconductor–metal systems. the necessity of introducing the image charge interactions is demonstrated by experiments and mathematical methods for semiconductor-metal image charge interactions are introduced and developed.

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Gryczynski, Karol Grzegorz May 2012.

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  • Gryczynski, Karol Grzegorz

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The modification of the band edge or emission energy of semiconductor quantum well light emitters due to image charge induced phenomenon is an emerging field of study. This effect observed in quantum well light emitters is critical for all metal-optics based light emitters including plasmonics, or nanometallic electrode based light emitters. This dissertation presents, for the first time, a systematic study of the image charge effect on semiconductor–metal systems. the necessity of introducing the image charge interactions is demonstrated by experiments and mathematical methods for semiconductor-metal image charge interactions are introduced and developed.

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  • May 2012

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  • Nov. 6, 2012, 3:03 p.m.

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  • June 14, 2017, 4:48 p.m.

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Gryczynski, Karol Grzegorz. Electrostatic Effects in III-V Semiconductor Based Metal-optical Nanostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115090/: accessed September 25, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .