Effects of 500 keV electron irradiation and subsequent annealing on 1/f noise in copper films

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Polycrystalline copper films were maintained at 90K on the cold stage of an electron microscope and irradiated with 500keV electrons to induce defect. With an electron dose of about 5 x 10/sup 20/cm/sup -2/, the spectral density of the noise voltage across the films increased by an order of magnitude while the electrical resistivity increased by at most 10%. The films were annealed at progressively higher temperatures; after each annealing process the 1/f noise and resistivity were remeasured at 90K. Both the 1/f noise and resistivity were reduced, but at the lower annealing temperatures the fractional reduction in the added ... continued below

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Pages: 7

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Pelz, J. & Clarke, J. October 1, 1985.

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Polycrystalline copper films were maintained at 90K on the cold stage of an electron microscope and irradiated with 500keV electrons to induce defect. With an electron dose of about 5 x 10/sup 20/cm/sup -2/, the spectral density of the noise voltage across the films increased by an order of magnitude while the electrical resistivity increased by at most 10%. The films were annealed at progressively higher temperatures; after each annealing process the 1/f noise and resistivity were remeasured at 90K. Both the 1/f noise and resistivity were reduced, but at the lower annealing temperatures the fractional reduction in the added noise was substantially more than in the added resistivity. These result suggest that a large fraction of the added noise may be generated by a small mobile fraction of the added defects that are more readily annealed than the majority of the defects. After a room temperature annealing process, both the noise and resistivity returned nearly to their initial values. The temperature dependence of the noise after irradiation and partial annealing was consistant with the Dutta-Dimon-Horn thermal activation model.

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Pages: 7

Notes

NTIS, PC A02/MF A01.

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  • 8. international conference on noise in physical system and 4. international conference on 1/f noise, Rome, Italy, 9 Sep 1985

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  • Other: DE86002954
  • Report No.: LBL-20385
  • Report No.: CONF-8509249-1
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 6247378
  • Archival Resource Key: ark:/67531/metadc1113586

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Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • October 1, 1985

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  • Feb. 22, 2018, 7:45 p.m.

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  • April 24, 2018, 7:04 p.m.

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Pelz, J. & Clarke, J. Effects of 500 keV electron irradiation and subsequent annealing on 1/f noise in copper films, article, October 1, 1985; [Berkeley,] California. (digital.library.unt.edu/ark:/67531/metadc1113586/: accessed December 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.