Ion-beam-induced migration and its effect on concentration profiles Page: 2 of 33
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1. INTRODUCTION
Atomic displacements resultin; from energetic-ion bombardment
of a solid inevitably have an effect on atomic migration, and
hence on the composition-versus-depth profile. his perturbation
may change an otherwise static distribution, or it may alter the
variation of a thermally evolving system. In the case of ion
backscattering or nuclear reaction analysis with light, MeV
particles, such effects are generally orders of magnitude smaller
than for Implantation of high-Z elements at lower energies.
Changes in depth distributions produced by such light-ion analysis
are frequently less than the experimental resolution, permitting
the measurement to be regarded as nondestructive. Nevertheless,
under certain conditions, the analysis beam effects may be quite
significant.
The purposes of this paper are to review the mechanisms by
which ion irradiation influences atomic transport, and to assess
their importance for ion backscattering and nuclear reaction
analyses. The discussion is also applicable to profiling by
sputtering erosion, but this technique will not be considered
in detail here. (See the sections dealing with SIMS and sputter
profiling in these proceedings.) The mechanisms of ion-induced
transport may be distinguished as follows. First, atoms move as
a result of atomic collisions as the analysis-beam particles
traverse the lattice, an effect frequently referred to as cascade
mixing. Second, mobile point defects generated by the irradiation
may undergo extensive diffusion before annihilation or agglomeration,
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Myers, S. M. Ion-beam-induced migration and its effect on concentration profiles, article, January 1, 1979; Albuquerque, New Mexico. (https://digital.library.unt.edu/ark:/67531/metadc1112719/m1/2/: accessed April 25, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.