Ion beam mixing of marker layers in Al and Si. [300 keV Ar ions]
Ion beam mixing of marker layers in Al and Si. [300 keV Ar ions], article, July 1, 1984; United States. (digital.library.unt.edu/ark:/67531/metadc1109308/: accessed May 21, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.