Determination of bulk diffusion lengths for angle-lapped semiconductor material via the scanning electron microscope: a theoretical analysis

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A standard procedure for the determintion of the minority carrier diffusion length by means of a scanning electron microscope (SEM) consists in scanning across an angle-lapped surface of a P--N junction and measuring the resultant short circuit current I/sub sc/ as a function of beam position. A detailed analysis of the I/sub sc/ originating from this configuration is presented. It is found that, for a point source excitation, the I/sub sc/ depends very simply on x, the variable distance between the surfce and the junction edge. The expression for the I/sub sc/ of a planar junction device is well known. ... continued below

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Pages: 22

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von Roos, O. May 31, 1978.

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Description

A standard procedure for the determintion of the minority carrier diffusion length by means of a scanning electron microscope (SEM) consists in scanning across an angle-lapped surface of a P--N junction and measuring the resultant short circuit current I/sub sc/ as a function of beam position. A detailed analysis of the I/sub sc/ originating from this configuration is presented. It is found that, for a point source excitation, the I/sub sc/ depends very simply on x, the variable distance between the surfce and the junction edge. The expression for the I/sub sc/ of a planar junction device is well known. If d, the constant distance between the plane of the surface of the semiconductor and the junction edge in the expression for the I/sub sc/ of a planar junction is merely replaced by x, the variable distance of the corresponding angle-lapped junction, an expression results which is correct to within a small fraction of a percent as long as the angle between the surfaces, 2 theta/sub 1/, is amaller than 10/sup 0/.

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Pages: 22

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Dep. NTIS, PC A02/MF A01.

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  • Report No.: DOE/JPL/1012-78/8
  • Report No.: JPL-PUB-78-47
  • Grant Number: EX-76-A-29-1012
  • DOI: 10.2172/6226477 | External Link
  • Office of Scientific & Technical Information Report Number: 6226477
  • Archival Resource Key: ark:/67531/metadc1105039

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • May 31, 1978

Added to The UNT Digital Library

  • Feb. 22, 2018, 7:45 p.m.

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  • March 22, 2018, 7:28 p.m.

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von Roos, O. Determination of bulk diffusion lengths for angle-lapped semiconductor material via the scanning electron microscope: a theoretical analysis, report, May 31, 1978; United States. (digital.library.unt.edu/ark:/67531/metadc1105039/: accessed August 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.