The outstanding noise and radiation hardness characteristics of epitaxial-channel junction field-effect transistors (JFET) suggest that a monolithic preamplifier based upon them may be able to meet the strict specifications for calorimetry at high luminosity colliders. Results obtained so far with a buried layer planar technology, among them an entire monolithic charge-sensitive preamplifier, are described.
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The outstanding noise and radiation hardness characteristics of epitaxial-channel junction field-effect transistors (JFET) suggest that a monolithic preamplifier based upon them may be able to meet the strict specifications for calorimetry at high luminosity colliders. Results obtained so far with a buried layer planar technology, among them an entire monolithic charge-sensitive preamplifier, are described.
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Radeka, V.; Rescia, S. (Brookhaven National Lab., Upton, NY (United States)); Rehn, L.A. (InterFET Corp., Garland, TX (United States)); Manfredi, P.F. & Speziali, V. (Pavia Univ. (Italy). Dipt. di Elettronica Istituto Nazionale di Fisica Nucleare, Milan (Italy)).Monolithic junction field-effect transistor charge preamplifier for calorimetry at high luminosity hadron colliders,
article,
November 1, 1991;
Upton, New York.
(https://digital.library.unt.edu/ark:/67531/metadc1102406/:
accessed April 25, 2024),
University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu;
crediting UNT Libraries Government Documents Department.