Studies of the dependence on oxidation thermal processes of effects on the electrical properties of silicon detectors by fast neutron radiation

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High resistivity silicon detectors along with MOS capacitors made on five silicon dioxides with different thermal conditions (975{degree}C to 1200{degree}C) have been exposed to fast neutron irradiation up to the fluence of a few times 10{sup 14} n/cm{sup 2}. New measurement techniques such as capacitance-voltage (C-V) of MOS capacitors and current-voltage (I-V) of back to back diodes (p{sup +}-n{sup {minus}}- p{sup +} if n{sup {minus}} is not inverted to p) or resistors (p{sup +}-p-p{sup +} if inverted) have been introduced in this study in monitoring the possible type-inversion (n{yields}p) under high neutron fluence. No type-inversion in the material underneath SiO{sub ... continued below

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Pages: (7 p)

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Li, Zheng & Kraner, H.W. November 1, 1991.

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High resistivity silicon detectors along with MOS capacitors made on five silicon dioxides with different thermal conditions (975{degree}C to 1200{degree}C) have been exposed to fast neutron irradiation up to the fluence of a few times 10{sup 14} n/cm{sup 2}. New measurement techniques such as capacitance-voltage (C-V) of MOS capacitors and current-voltage (I-V) of back to back diodes (p{sup +}-n{sup {minus}}- p{sup +} if n{sup {minus}} is not inverted to p) or resistors (p{sup +}-p-p{sup +} if inverted) have been introduced in this study in monitoring the possible type-inversion (n{yields}p) under high neutron fluence. No type-inversion in the material underneath SiO{sub 2} and the p{sup +} contact has been observed so far in this work for detectors made on the five oxides up to the neutron fluence of a few times 10{sup 13} n/cm{sup 2}. However, it has been found that detectors made on higher temperature oxides (T{le} 1100{degree}C) exhibit less leakage current increase at high neutron fluence ({phi} {le} 10{sup 13} n/cm{sup 2}).

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Pages: (7 p)

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OSTI; NTIS; INIS; GPO Dep.

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  • IEEE nuclear science symposium, Santa Fe, NM (United States), 5-9 Nov 1991

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  • Other: DE92007193
  • Report No.: BNL-46086
  • Report No.: CONF-911106--74
  • Grant Number: AC02-76CH00016
  • Office of Scientific & Technical Information Report Number: 5915795
  • Archival Resource Key: ark:/67531/metadc1100106

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  • November 1, 1991

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  • Feb. 18, 2018, 3:59 p.m.

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  • April 23, 2018, 12:51 p.m.

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Li, Zheng & Kraner, H.W. Studies of the dependence on oxidation thermal processes of effects on the electrical properties of silicon detectors by fast neutron radiation, article, November 1, 1991; Upton, New York. (digital.library.unt.edu/ark:/67531/metadc1100106/: accessed August 20, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.