Stress studies in EFG. Fourth quarterly progress report, April 1, 1983-June 30, 1983

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Stress distributions have been calculated for a creep law predicting a higher rate of plastic deformation than modeled in earlier studies. The expected reduction in stresses is obtained, although quantitative results are not yet available because of difficulties in obtaining convergent solutions. Improved schemes for calculating growth system temperature distributions are being evaluated in a new subtask started at MIT. Other work in temperature field modeling has examined the possibility of using horizontal temperature gradients to influence stress distributions in ribbon. The defect structure of 10 cm wide ribbon grown in the cartridge system has been examined. A new feature … continued below

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50 pages

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Creator: Unknown. August 15, 1983.

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Stress distributions have been calculated for a creep law predicting a higher rate of plastic deformation than modeled in earlier studies. The expected reduction in stresses is obtained, although quantitative results are not yet available because of difficulties in obtaining convergent solutions. Improved schemes for calculating growth system temperature distributions are being evaluated in a new subtask started at MIT. Other work in temperature field modeling has examined the possibility of using horizontal temperature gradients to influence stress distributions in ribbon. The defect structure of 10 cm wide ribbon grown in the cartridge system has been examined. A new feature is identified from an examination of cross-sectional micrographs. It consists of high density dislocation bands extending through the ribbon thickness. A four-point bending apparatus has been constructed for high temperature (greater than or equal to 1000/sup 0/C) study of the creep response of silicon, and will be used to generate defects for comparison with as-grown defects in ribbon. Another subtask has been started in collaboration with the University of Illinois which will examine the feasibility of laser interferometric techniques for sheet residual stress distribution measurement. The mathematical formalism for calculating residual stress from changes in surface topology caused by an applied stress in a rectangular specimen has been developed, and the system for laser interferometric measurement to obtain surface topology data has been successfully tested on CZ silicon. Testing and calibration of different fiber optics temperature sensor configurations are underway.

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50 pages

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NTIS, PC A03/MF A01; 1.

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  • August 15, 1983

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  • Feb. 25, 2021, 11:58 p.m.

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Thumbnail image of item number 1 in: 'Stress studies in EFG. Fourth quarterly progress report, April 1, 1983-June 30, 1983'.
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Stress studies in EFG. Fourth quarterly progress report, April 1, 1983-June 30, 1983, report, August 15, 1983; United States. (https://digital.library.unt.edu/ark:/67531/metadc1096075/: accessed April 25, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.

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