Amorphous-Si solar cells. First quarterly progress report, 1 January-31 March 1979

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The effort at University of Delaware during the first three months of a Department of Energy sponsored a-Si program is described. The objectives of the program are to study and improve photovoltaic properties of plasma-deposited a-Si and model a-Si devices with a view towards improving device design. A capacitively-coupled, rf-induced plasma-system for depositing a-Si has been built and a-Si films have been deposited from SiH/sub 4/ decomposition. The resistivity, doping and photoconductivity studies of a-Si have been started. a-Si films are highly photoconductive and can be doped relatively easily by AsH/sub 3/. A device-analysis program to model quantum efficiency of … continued below

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38 pages

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Dalal, V. January 1, 1979.

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  • University of Delaware
    Publisher Info: University of Delaware, Institute of Energy Conversion, Newark, DE (United States)
    Place of Publication: Newark, Delaware

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The effort at University of Delaware during the first three months of a Department of Energy sponsored a-Si program is described. The objectives of the program are to study and improve photovoltaic properties of plasma-deposited a-Si and model a-Si devices with a view towards improving device design. A capacitively-coupled, rf-induced plasma-system for depositing a-Si has been built and a-Si films have been deposited from SiH/sub 4/ decomposition. The resistivity, doping and photoconductivity studies of a-Si have been started. a-Si films are highly photoconductive and can be doped relatively easily by AsH/sub 3/. A device-analysis program to model quantum efficiency of a-Si devices has been written. The program has been used to study the performance of a-Si devices as a function of diffusion lengths, junction layer widths etc. The program shows the importance of using extremely narrow junction widths and back-surface reflection of light. The program can also simulate light-trapping in a-Si cells, and it is shown that even partial light-trapping can lead to approx. 20% improvement in efficiency, a significant increase for films with small diffusion lengths.

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38 pages

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NTIS, PC A03/MF A01.

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  • January 1, 1979

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  • Feb. 18, 2018, 3:59 p.m.

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  • April 11, 2022, 2:58 p.m.

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Dalal, V. Amorphous-Si solar cells. First quarterly progress report, 1 January-31 March 1979, report, January 1, 1979; Newark, Delaware. (https://digital.library.unt.edu/ark:/67531/metadc1096066/: accessed July 17, 2025), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.

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