EBIC/TEM investigations of process-induced defects in EFG silicon ribbon

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Description

EBIC and STEM observations on unprocessed and processed EFG ribbon show that the phosphorus diffused junction depth is not uniform, and that a variety of chemical impurities precipitate out during processing. Two kinds of precipitates are found: (1) 10 nm or less in size, located at the dislocation nodes in sub-boundary like dislocation arrangements formed during processing and (2) large precipitates, the chemical composition of which has been partially identified. These large precipitates emit dense dislocations tangles into the adjacent crystal volume.

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Pages: 8

Creation Information

Cunningham, B. & Ast, D.G. December 1, 1981.

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Description

EBIC and STEM observations on unprocessed and processed EFG ribbon show that the phosphorus diffused junction depth is not uniform, and that a variety of chemical impurities precipitate out during processing. Two kinds of precipitates are found: (1) 10 nm or less in size, located at the dislocation nodes in sub-boundary like dislocation arrangements formed during processing and (2) large precipitates, the chemical composition of which has been partially identified. These large precipitates emit dense dislocations tangles into the adjacent crystal volume.

Physical Description

Pages: 8

Notes

NTIS, PC A02/MF A01.

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  • Other: DE82011123
  • Report No.: DOE/JPL/954852-8
  • Grant Number: NAS-7-100-954852
  • DOI: 10.2172/5748434 | External Link
  • Office of Scientific & Technical Information Report Number: 5748434
  • Archival Resource Key: ark:/67531/metadc1095118

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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Creation Date

  • December 1, 1981

Added to The UNT Digital Library

  • Feb. 18, 2018, 3:59 p.m.

Description Last Updated

  • March 28, 2018, 12:59 p.m.

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Cunningham, B. & Ast, D.G. EBIC/TEM investigations of process-induced defects in EFG silicon ribbon, report, December 1, 1981; United States. (digital.library.unt.edu/ark:/67531/metadc1095118/: accessed December 17, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.