Cadmium sulfide/copper sulfide heterojunction cell research by sputter deposition. Quarterly technical progress report, March 1, 1981-June 30, 1981

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A second series of hybrid cells with sputter-deposited Cu/sub 2/S layers has been fabricated. An efficiency of about 4 3/4%, without antireflection coating, was achieved for one of the cells. This result approaches the 5 3/4% which was achieved in the first set (different Cu/sub 2/S deposition conditions) and confirms the viability of the sputtering process for this application. Significant progress has been made in fabricating all-sputtered cells with CdS layers deposited by planar magnetron reactive sputtering. Efficiencies of approximately 3%, without antireflection coatings, have been achieved in the as-deposited state for seven cells. Individual cells have yielded a J/sub ... continued below

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Pages: 57

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Thornton, J.A.; Anderson, W.W. & Meakin, J.D. August 1, 1981.

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A second series of hybrid cells with sputter-deposited Cu/sub 2/S layers has been fabricated. An efficiency of about 4 3/4%, without antireflection coating, was achieved for one of the cells. This result approaches the 5 3/4% which was achieved in the first set (different Cu/sub 2/S deposition conditions) and confirms the viability of the sputtering process for this application. Significant progress has been made in fabricating all-sputtered cells with CdS layers deposited by planar magnetron reactive sputtering. Efficiencies of approximately 3%, without antireflection coatings, have been achieved in the as-deposited state for seven cells. Individual cells have yielded a J/sub sc/ of 12 mA/cm/sup 2/, a V/sub oc/ of 0.53V, and a fill factor of 0.72. Taken together these parameters would yield an efficiency of 4 1/2%. A strong coupling is found between the properties of the Cu/sub 2/S and CdS layers. However, the conditions which maximize J/sub sc/, V/sub oc/ and the fill factor do not appear to be mutually exclusive. Reflectance measurements indicate that 30% or more of the incident radiation is being reflected from the front surface of the cells over the wavelength range of the solar spectrum. Thus optimization of the cell parameters with a suitable antireflection coating should yield cell efficiencies of about 6%. Characterization of the junctions formed in the all-sputtered cells under near-optimum deposition conditions indicates that they have remarkable properties in their as-deposited state, being very similar to high performance conventional cells after heat treatment. Junction ideality factors are about unity in the light, with J/sub 0/ values of about 2 x 10/sup -8/ mA/cm/sup 2/. Interface recombination velocities are as low as a few times 10/sup 5/ cm/sec. CdS depletion layer widths are about 2000 nm in the dark and collapse to about 200 nm under illumination.

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Pages: 57

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NTIS, PC A04/MF A01.

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  • Other: DE82006851
  • Report No.: SERI/PR-9296-T2
  • Grant Number: AC02-77CH00178
  • DOI: 10.2172/5618874 | External Link
  • Office of Scientific & Technical Information Report Number: 5618874
  • Archival Resource Key: ark:/67531/metadc1094116

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  • August 1, 1981

Added to The UNT Digital Library

  • Feb. 10, 2018, 10:06 p.m.

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  • March 22, 2018, 12:58 p.m.

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Thornton, J.A.; Anderson, W.W. & Meakin, J.D. Cadmium sulfide/copper sulfide heterojunction cell research by sputter deposition. Quarterly technical progress report, March 1, 1981-June 30, 1981, report, August 1, 1981; United States. (digital.library.unt.edu/ark:/67531/metadc1094116/: accessed October 16, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.