GaAs ohmic contacts for high temperature devices

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Instrumentation requirements for geothermal wells, jet engines, and nuclear reactors have exceeded the high temperature capability of silicon devices. As one part of a program to develop high temperature compound semiconductor devices, four basic ohmic contact systems for n-type GaAs have been evaluated for contact resistance as a function of temperature (24 to 350/sup 0/C) and time (at 300/sup 0/C): Ni/AuGe; Ag/Si and Ag/Ni/Si; Al/Ge and Al/AlGe; and Au/Nb/Si and Pt/Nb/Si. Optimization of processing parameters produced viable high temperature contacts with all but the Al/Ge systems. Aging at 300/sup 0/C changed the contact resistivity in only the Ag/Ni/Si contacts. Film ... continued below

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Pages: 6

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Coquat, J.A. & Palmer, D.W. January 1, 1980.

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Description

Instrumentation requirements for geothermal wells, jet engines, and nuclear reactors have exceeded the high temperature capability of silicon devices. As one part of a program to develop high temperature compound semiconductor devices, four basic ohmic contact systems for n-type GaAs have been evaluated for contact resistance as a function of temperature (24 to 350/sup 0/C) and time (at 300/sup 0/C): Ni/AuGe; Ag/Si and Ag/Ni/Si; Al/Ge and Al/AlGe; and Au/Nb/Si and Pt/Nb/Si. Optimization of processing parameters produced viable high temperature contacts with all but the Al/Ge systems. Aging at 300/sup 0/C changed the contact resistivity in only the Ag/Ni/Si contacts. Film adhesion was excellent for the Al/Ge, Ni/AuGe, and Ag/Si systems as measured with ultrasonic Al wire bond pull strengths. Lower adhesion was noticed with Nb/Si systems measured with gold wire bond pull strengths.

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Pages: 6

Notes

Dep. NTIS, MF/A01.

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  • Electronic component conference, San Francisco, CA, USA, 28 Apr 1980

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  • Report No.: SAND-79-2122C
  • Report No.: CONF-800410-3
  • Grant Number: EY-76-C-04-0789
  • Office of Scientific & Technical Information Report Number: 5583445
  • Archival Resource Key: ark:/67531/metadc1093742

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • January 1, 1980

Added to The UNT Digital Library

  • Feb. 10, 2018, 10:06 p.m.

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  • April 19, 2018, 10:18 a.m.

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Coquat, J.A. & Palmer, D.W. GaAs ohmic contacts for high temperature devices, article, January 1, 1980; United States. (digital.library.unt.edu/ark:/67531/metadc1093742/: accessed October 19, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.