Cryogenically cooled broad-band GaAs field-effect transistor preamplifier

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The Antiproton Source of the Fermi National Accelerator Laboratory will be capable of accumulating a total of 4.3 x 10/sup 11/ antiprotons in four hours when a wide-band feedback system for stochastic beam cooling is used. The feedback system detects and corrects at every revolution, the statistical fluctuations of the beam position and momentum. One of the essential components of such a system is a low-noise broad-band preamplifier. Acryogenically cooled 1 to 2 GHz low-noise broad-band prototype preamplifier utilizing GaAs field-effect transistors is described for this application. The preamplifier has an average gain of 30 dB and 35 dB at ... continued below

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Pages: 9

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Lo, C.C. & Leskovar, B. October 1, 1983.

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Description

The Antiproton Source of the Fermi National Accelerator Laboratory will be capable of accumulating a total of 4.3 x 10/sup 11/ antiprotons in four hours when a wide-band feedback system for stochastic beam cooling is used. The feedback system detects and corrects at every revolution, the statistical fluctuations of the beam position and momentum. One of the essential components of such a system is a low-noise broad-band preamplifier. Acryogenically cooled 1 to 2 GHz low-noise broad-band prototype preamplifier utilizing GaAs field-effect transistors is described for this application. The preamplifier has an average gain of 30 dB and 35 dB at ambient temperatures of 293/sup 0/K and 18/sup 0/K, respectively. The noise figure has a minimum value of 0.75 dB at 300/sup 0/K and 0.24 dB at 18/sup 0/K. The optimum preamplifier operating conditions for a minimum noise figure at temperatures of 293/sup 0/K, 80/sup 0/K and 18/sup 0/K are given and are discussed. Also, the phase-shift characteristics, the input and output voltage standing-wave ratio as a function of frequency and intermodulation products content as a function of the input power level were measured.

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Pages: 9

Notes

NTIS, PC A02/MF A01.

Source

  • Nuclear science symposium, San Francisco, CA, USA, 19 Oct 1983

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  • Other: DE84004166
  • Report No.: LBL-15983
  • Report No.: CONF-831015-29
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 5554273
  • Archival Resource Key: ark:/67531/metadc1093301

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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Creation Date

  • October 1, 1983

Added to The UNT Digital Library

  • Feb. 10, 2018, 10:06 p.m.

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  • April 25, 2018, 3:58 p.m.

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Lo, C.C. & Leskovar, B. Cryogenically cooled broad-band GaAs field-effect transistor preamplifier, article, October 1, 1983; [Berkeley,] California. (digital.library.unt.edu/ark:/67531/metadc1093301/: accessed December 11, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.