LSA large area silicon sheet task continuous liquid feed Czochralski growth. Quarterly report, April-June 1979

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This project, which is now in its second phase, is directed toward the design and development of equipment and processes to demonstrate continuous growth of crystals by the Czochralski method, suitable for producing single silicon crystals for use in solar cells. Continuous is defined as the growth of at least 150 kg. of mono silicon crystal, 150 mm. in diameter, from one growth container. The approach to meeting this goal is to develop a furnace continuous liquid replenishment of the growth crucible, accomplished by a meltdown system with a continuous solid silicon feed mechanism and a liquid transfer system, with ... continued below

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Pages: 19

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Fiegl, G. July 1, 1979.

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Description

This project, which is now in its second phase, is directed toward the design and development of equipment and processes to demonstrate continuous growth of crystals by the Czochralski method, suitable for producing single silicon crystals for use in solar cells. Continuous is defined as the growth of at least 150 kg. of mono silicon crystal, 150 mm. in diameter, from one growth container. The approach to meeting this goal is to develop a furnace continuous liquid replenishment of the growth crucible, accomplished by a meltdown system with a continuous solid silicon feed mechanism and a liquid transfer system, with associated automatic feedback controls. During Phase I of this program, it became apparent that silicon monoxide build up in the furnace interior was the major limiting factor to achieving mono crystalline growth for large portions of material processed. As a result, growth under reduced pressure is a major goal of the program plan under Phase II. Furnace conversion for operation in low pressure range was completed during the last quarter. Batch recharging of the meltdown chamber, as exercised under Phase I of this program, prohibited taking full advantage of a continuous process. Our current effort included development of systems for continuous solid recharging of the meltdown chamber for various forms of poly silicon. Design concepts and fabrication of one system are complete.The melt transfer system used during Phase I is further developed to increase its lifetime significantly, and at the same time, drastically improve the economics of the system. Latest efforts include the design of a new heating element and a reduction of the total melt transfer length. To achieve the economic goals for 1986, the Continuous Liquid Feed (CLF) Furnace must be capable of producing crystals of 150 mm. in diameter, with solidification rates > 2 kg./hr. and a minimum run throughput of 150 kg.

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Pages: 19

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Dep. NTIS, PC A02/MF A01.

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  • Report No.: DOE/JPL/954886-6
  • Grant Number: NAS-7-100-954886
  • DOI: 10.2172/5600868 | External Link
  • Office of Scientific & Technical Information Report Number: 5600868
  • Archival Resource Key: ark:/67531/metadc1092961

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  • July 1, 1979

Added to The UNT Digital Library

  • Feb. 10, 2018, 10:06 p.m.

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  • April 17, 2018, 1:38 p.m.

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Fiegl, G. LSA large area silicon sheet task continuous liquid feed Czochralski growth. Quarterly report, April-June 1979, report, July 1, 1979; United States. (digital.library.unt.edu/ark:/67531/metadc1092961/: accessed June 21, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.