Development of a polysilicon process based on chemical vapor deposition (Phase 1). First quarterly progress report, 6 October-31 December 1979

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The goal of this program is to demonstrate that a dichlorosilane based reductive chemical vapor deposition (CVD) process is capable of producing, at low cost, high quality polycrystalline silicon. Physical form and purity of this material will be consistent with LSA material requirements for use in the manufacture of high efficiency solar cells. Chemical processes involved in achieving the objective are reviewed with emphasis placed on advantages of this process when compared with existing polycrystalline silicon production technology. Installation of a CVD reactor with associated analytical instrumentation is described. Preliminary reactor data has been favorable demonstrating the anticipated increased deposition ... continued below

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Pages: 65

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McCormick, J. R.; Arvidson, A.; Plahutnik, F.; Sawyer, D. & Sharp, K. January 1, 1980.

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Description

The goal of this program is to demonstrate that a dichlorosilane based reductive chemical vapor deposition (CVD) process is capable of producing, at low cost, high quality polycrystalline silicon. Physical form and purity of this material will be consistent with LSA material requirements for use in the manufacture of high efficiency solar cells. Chemical processes involved in achieving the objective are reviewed with emphasis placed on advantages of this process when compared with existing polycrystalline silicon production technology. Installation of a CVD reactor with associated analytical instrumentation is described. Preliminary reactor data has been favorable demonstrating the anticipated increased deposition rate and conversion efficiency when dichlorosilane decomposition is compared with trichlorosilane decomposition. No serious problems have been encountered which might limit dichlorosilane use as a reactor feed material. Design considerations for a process development unit (PDU) for dichlorosilane synthesis are reviewed. A design which effectively suppresses monochlorosilane during the redistribution of trichlorosilane was decided upon and its implementation is described. The PDU will be used to collect data on optimization of the redistribution process as well as to determine product quality. Based on experimental data collected during the first quarter along with already available data on the redistribution and hydrogenation processes, a preliminary mass balance is established.

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Pages: 65

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Dep. NTIS, PC A04/MF A01.

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  • Report No.: DOE/JPL/955533-79/1
  • Grant Number: NAS-7-100-955533
  • DOI: 10.2172/5491926 | External Link
  • Office of Scientific & Technical Information Report Number: 5491926
  • Archival Resource Key: ark:/67531/metadc1092915

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Office of Scientific & Technical Information Technical Reports

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  • January 1, 1980

Added to The UNT Digital Library

  • Feb. 10, 2018, 10:06 p.m.

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  • Feb. 22, 2018, 1:25 p.m.

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McCormick, J. R.; Arvidson, A.; Plahutnik, F.; Sawyer, D. & Sharp, K. Development of a polysilicon process based on chemical vapor deposition (Phase 1). First quarterly progress report, 6 October-31 December 1979, report, January 1, 1980; United States. (digital.library.unt.edu/ark:/67531/metadc1092915/: accessed October 15, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.