Pulsed laser planarization of metal films for multilevel interconnects

PDF Version Also Available for Download.

Description

Multilevel interconnect schemes for integrated circuits generally require one or more planarization steps, in order to maintain an acceptably flat topography for lithography and thin-film step coverage on the higher levels. Traditional approaches have involved planarization of the interlevel insulation (dielectric) layers, either by spin-on application (e.g., polyimide), or by reflow (e.g., phosphosilicate glass). We have pursued an alternative approach, in which each metal level is melted (hence planarized) using a pulsed laser prior to patterning. Short (approx.1 ..mu..s) pulses are used to preclude undesirable metallurgical reactions between the film, adhesion or barrier layer, and dielectric layer. Laser planarization of ... continued below

Physical Description

Pages: 9

Creation Information

Tuckerman, D.B. & Schmitt, R.L. May 1, 1985.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Publishers

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

Multilevel interconnect schemes for integrated circuits generally require one or more planarization steps, in order to maintain an acceptably flat topography for lithography and thin-film step coverage on the higher levels. Traditional approaches have involved planarization of the interlevel insulation (dielectric) layers, either by spin-on application (e.g., polyimide), or by reflow (e.g., phosphosilicate glass). We have pursued an alternative approach, in which each metal level is melted (hence planarized) using a pulsed laser prior to patterning. Short (approx.1 ..mu..s) pulses are used to preclude undesirable metallurgical reactions between the film, adhesion or barrier layer, and dielectric layer. Laser planarization of metals is particularly well suited to multilevel systems which include ground or power planes. Results are presented for planarization of gold films on SiO/sub 2/ dielectric layers using a flashlamp-pumped dye laser. The pulse duration is approx.1 ..mu..s, which allows the heat pulse to uniformly penetrate the gold while not penetrating substantially through the underlying SiO/sub 2/ (hence not perturbing the lower levels of metal). Excellent planarization of the gold films is achieved (less than 0.1 ..mu..m surface roughness, even starting with extreme topographic variations), as well as improved conductivity. To demonstrate the process, numerous planarized two-layer structures (transmission lines under a ground plane) were fabricated and characterized. 9 refs., 2 figs.

Physical Description

Pages: 9

Notes

NTIS, PC A02/MF A01; 1.

Source

  • VLSI multilevel interconnection conference, Santa Clara, CA, USA, 24 Jun 1985

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Other: DE86012339
  • Report No.: UCRL-92257
  • Report No.: CONF-8506123-2
  • Grant Number: W-7405-ENG-48
  • Office of Scientific & Technical Information Report Number: 5536074
  • Archival Resource Key: ark:/67531/metadc1092724

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • May 1, 1985

Added to The UNT Digital Library

  • Feb. 10, 2018, 10:06 p.m.

Description Last Updated

  • March 22, 2018, 12:58 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 2

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

International Image Interoperability Framework

IIF Logo

We support the IIIF Presentation API

Tuckerman, D.B. & Schmitt, R.L. Pulsed laser planarization of metal films for multilevel interconnects, article, May 1, 1985; United States. (digital.library.unt.edu/ark:/67531/metadc1092724/: accessed September 24, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.