Research on defects and transport in amorphous silicon-based semiconductors

PDF Version Also Available for Download.

Description

This report describes the results from research on two topics: (1) the effects of light-soaking on the electron drift mobility in a-Si:H, and (2) modulated electron spin resonance measurements and their relationship to the electronic correlation energy of the D center in a-Si:H. Both of these projects were undertaken to better determine where the standard'' model for a-Si:H breaks down. The standard model is reasonably successful in accounting for the most elementary deep trapping'' aspects of electron and hole transport in a-Si:H, and it accounts adequately for the sub-band-gap optical properties. However, it is much less clear whether it provides ... continued below

Physical Description

Pages: (16 p)

Creation Information

Schiff, E.A.; Antoniadis, H.; Lee, J.K. & Wang, Q. (Syracuse Univ., NY (United States)) April 1, 1992.

Context

This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this report can be viewed below.

Who

People and organizations associated with either the creation of this report or its content.

Sponsor

Publishers

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this report. Follow the links below to find similar items on the Digital Library.

Description

This report describes the results from research on two topics: (1) the effects of light-soaking on the electron drift mobility in a-Si:H, and (2) modulated electron spin resonance measurements and their relationship to the electronic correlation energy of the D center in a-Si:H. Both of these projects were undertaken to better determine where the standard'' model for a-Si:H breaks down. The standard model is reasonably successful in accounting for the most elementary deep trapping'' aspects of electron and hole transport in a-Si:H, and it accounts adequately for the sub-band-gap optical properties. However, it is much less clear whether it provides a sufficient basis for understanding several effects which are crucial in operating solar cells: electron and hole mobilities and recombination in the presence of light-bias and space-charge. In the standard model, one would not expect significant effects on drift mobilities due to light-soaking, which would be envisioned as simply increasing the D-center density. Similarly, in the standard model one would not anticipate a significant temperature dependence to electron spin resonance, because essentially all spins are already detected. Discussions in the available literature on the evidence regarding both effects were inconclusive. The work reported here sets considerably more stringent constraints on the magnitude of the two effects.

Physical Description

Pages: (16 p)

Notes

OSTI; NTIS; GPO Dep.

Language

Item Type

Identifier

Unique identifying numbers for this report in the Digital Library or other systems.

  • Other: DE92001223
  • Report No.: NREL/TP-451-4751
  • Grant Number: AC02-83CH10093
  • DOI: 10.2172/5663038 | External Link
  • Office of Scientific & Technical Information Report Number: 5663038
  • Archival Resource Key: ark:/67531/metadc1092182

Collections

This report is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this report?

When

Dates and time periods associated with this report.

Creation Date

  • April 1, 1992

Added to The UNT Digital Library

  • Feb. 10, 2018, 10:06 p.m.

Description Last Updated

  • March 5, 2018, 4:21 p.m.

Usage Statistics

When was this report last used?

Congratulations! It looks like you are the first person to view this item online.

Interact With This Report

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

International Image Interoperability Framework

IIF Logo

We support the IIIF Presentation API

Schiff, E.A.; Antoniadis, H.; Lee, J.K. & Wang, Q. (Syracuse Univ., NY (United States)). Research on defects and transport in amorphous silicon-based semiconductors, report, April 1, 1992; United States. (digital.library.unt.edu/ark:/67531/metadc1092182/: accessed October 16, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.