TEM and ion channeling were used to examine the microstructure of Al implanted with Zn or Sb following pulsed electron beam annealing with deposited energies of 0.7 to 1.6 J/cm/sup 2/. The Zn-implanted samples show a high density of dislocations in the near surface region. Zn precipitation is not seen in the electron diffraction patterns. For Sb, randomly oriented AlSb precipitates are observed, and precipitation is inferred to have occurred in molten Al. This is accounted for with the Al-Sb binary phase diagram.
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TEM and ion channeling were used to examine the microstructure of Al implanted with Zn or Sb following pulsed electron beam annealing with deposited energies of 0.7 to 1.6 J/cm/sup 2/. The Zn-implanted samples show a high density of dislocations in the near surface region. Zn precipitation is not seen in the electron diffraction patterns. For Sb, randomly oriented AlSb precipitates are observed, and precipitation is inferred to have occurred in molten Al. This is accounted for with the Al-Sb binary phase diagram.
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Follstaedt, D.M.; Picraux, S.T. & Wampler, W.R.Precipitation in ion-implanted Al during electron beam pulsed annealing,
article,
January 1, 1979;
Albuquerque, New Mexico.
(https://digital.library.unt.edu/ark:/67531/metadc1089695/:
accessed April 18, 2024),
University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu;
crediting UNT Libraries Government Documents Department.
