Thin films of Y--Ba--Cu--O were produced by rf sputtering of YBa{sub 2}Cu{sub 3}O{sub 7-x} ceramic targets, using a variety of plasma compositions, rf power levels, and substrate temperatures. Post annealing of these films in oxygen produced superconducting films with T{sub c} values between 40--60 K, broad transition widths and semiconductor-like electrical behavior above T{sub c}. Subsequent annealing at 850{degree}C in an inert gas with a residual oxygen partial pressure of {le}10 ppM followed by an oxygen anneal produced high quality thin films: T{sub c} > 85 K with narrow transition widths. The structure and morphology of these films during reduction-oxidation …
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Thin films of Y--Ba--Cu--O were produced by rf sputtering of YBa{sub 2}Cu{sub 3}O{sub 7-x} ceramic targets, using a variety of plasma compositions, rf power levels, and substrate temperatures. Post annealing of these films in oxygen produced superconducting films with T{sub c} values between 40--60 K, broad transition widths and semiconductor-like electrical behavior above T{sub c}. Subsequent annealing at 850{degree}C in an inert gas with a residual oxygen partial pressure of {le}10 ppM followed by an oxygen anneal produced high quality thin films: T{sub c} > 85 K with narrow transition widths. The structure and morphology of these films during reduction-oxidation processing were monitored using x-ray diffraction and electron microscopy. 8 refs., 4 figs.
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Garzon, F.H.; Beery, J.G.; Wilde, D.K. & Raistrick, I.D.Partial reduction of re-oxidation processing of Y-Ba-Cu-O sputtered thin films,
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January 1, 1989;
New Mexico.
(https://digital.library.unt.edu/ark:/67531/metadc1086605/:
accessed April 17, 2024),
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