Ion implantation of boron in germanium

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Ion implantation of /sup 11/B/sup +/ into room temperature Ge samples leads to a p-type layer prior to any post implant annealing steps. Variable temperature Hall measurements and deep level transient spectroscopy experiments indicate that room temperature implantation of /sup 11/B/sup +/ into Ge results in 100% of the boron ions being electrically active as shallow acceptor, over the entire dose range (5 x 10/sup 11//cm/sup 2/ to 1 x 10/sup 14//cm/sup 2/) and energy range (25 keV to 100 keV) investigated, without any post implant annealing. The concentration of damage related acceptor centers is only 10% of the boron ... continued below

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Pages: 87

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Jones, K.S. May 1, 1985.

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Ion implantation of /sup 11/B/sup +/ into room temperature Ge samples leads to a p-type layer prior to any post implant annealing steps. Variable temperature Hall measurements and deep level transient spectroscopy experiments indicate that room temperature implantation of /sup 11/B/sup +/ into Ge results in 100% of the boron ions being electrically active as shallow acceptor, over the entire dose range (5 x 10/sup 11//cm/sup 2/ to 1 x 10/sup 14//cm/sup 2/) and energy range (25 keV to 100 keV) investigated, without any post implant annealing. The concentration of damage related acceptor centers is only 10% of the boron related, shallow acceptor center concentration for low energy implants (25 keV), but becomes dominant at high energies (100 keV) and low doses (<1 x 10/sup 12//cm/sup 2/). Three damage related hole traps are produced by ion implantation of /sup 11/B/sup +/. Two of these hole traps have also been observed in ..gamma..-irradiated Ge and may be oxygen-vacancy related defects, while the third trap may be divacancy related. All three traps anneal out at low temperatures (<300/sup 0/C). Boron, from room temperature implantation of BF/sub 2//sup +/ into Ge, is not substitutionally active prior to a post implant annealing step of 250/sup 0/C for 30 minutes. After annealing additional shallow acceptors are observed in BF/sub 2//sup +/ implanted samples which may be due to fluorine or flourine related complexes which are electrically active.

Physical Description

Pages: 87

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NTIS, PC A05/MF A01.

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  • Other Information: Thesis

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  • Other: DE85016638
  • Report No.: LBL-19615
  • Grant Number: AC03-76SF00098
  • DOI: 10.2172/5425716 | External Link
  • Office of Scientific & Technical Information Report Number: 5425716
  • Archival Resource Key: ark:/67531/metadc1072794

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Creation Date

  • May 1, 1985

Added to The UNT Digital Library

  • Feb. 4, 2018, 10:51 a.m.

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  • April 25, 2018, 4:17 p.m.

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Jones, K.S. Ion implantation of boron in germanium, report, May 1, 1985; [Berkeley,] California. (digital.library.unt.edu/ark:/67531/metadc1072794/: accessed September 26, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.