Fabrication and characterization of ITO/silicon SIS solar cells. Final report, October 1, 1978-April 30, 1980

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The objectives of this research were to optimize the performance of ITO/polycrystalline silicon solar cells, identify performance limitations, identify major stability problems which would inhibit terrestrial application of these devices, evaluate the impact of indium supply and price on terrestrial applications, and evaluate the economic viability of ITO sputter deposited solar cells. These goals were successfully achieved during the course of this multipronged effort. Both area scaling with efficiency maintenance were achieved by process modifications including surface preparation and in-situ passivation techniques. Indium tin oxide on Wacker polycrystalline silicon solar cells were fabricated which achieved 13.7% efficiency for 11 cm/sup ... continued below

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Pages: 153

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DuBow, J. B. June 1, 1980.

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Description

The objectives of this research were to optimize the performance of ITO/polycrystalline silicon solar cells, identify performance limitations, identify major stability problems which would inhibit terrestrial application of these devices, evaluate the impact of indium supply and price on terrestrial applications, and evaluate the economic viability of ITO sputter deposited solar cells. These goals were successfully achieved during the course of this multipronged effort. Both area scaling with efficiency maintenance were achieved by process modifications including surface preparation and in-situ passivation techniques. Indium tin oxide on Wacker polycrystalline silicon solar cells were fabricated which achieved 13.7% efficiency for 11 cm/sup 2/ devices. Typical open circuit voltages were 0.525 volts, short circuit currents, 34 mA/cm/sup 2/, and fill factors of 0.75. In the course of this project, three device measurement techniques which assisted in improving cell efficiency and which have broad applicability to all photovoltaic devices were introduced. These were automated admittance and surface state analysis, noise spectral density analysis, and automated I-V and C-V analysis. These measurements were combined with Auger/ESCA, EBIC and flying spot scanner, and other measurement techniques to identify grain boundaries, intragrain defects, edge leakage, and interface losses which were subsequently alleviated through process improvements. It is concluded from this work that prototype production of cells and modules based on this technology would be warranted in the near term.

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Pages: 153

Notes

NTIS, PC A08/MF A01.

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  • Report No.: SERI/TR-8232-1-T1
  • Grant Number: AC02-77CH00178
  • DOI: 10.2172/5321816 | External Link
  • Office of Scientific & Technical Information Report Number: 5321816
  • Archival Resource Key: ark:/67531/metadc1069998

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  • June 1, 1980

Added to The UNT Digital Library

  • Feb. 4, 2018, 10:51 a.m.

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  • March 23, 2018, 2:51 p.m.

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DuBow, J. B. Fabrication and characterization of ITO/silicon SIS solar cells. Final report, October 1, 1978-April 30, 1980, report, June 1, 1980; United States. (digital.library.unt.edu/ark:/67531/metadc1069998/: accessed November 19, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.